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Receptors: Models for Binding, Trafficking, and Signaling

Receptors: Models for Binding, Trafficking, and Signaling
Author: Douglas A. Lauffenburger - Jennifer Linderman
ISBN 13: 9780195106633
ISBN 10: 195106636
Edition: N/A
Publisher: Oxford University Press
Publication Date: 1996-01-11
Format: Paperback
Pages: 376
List Price: $175.00

Receptors: Models for Binding, Trafficking, and Signaling bridges the gap between chemical engineering and cell biology by lucidly and practically demonstrating how a mathematical modeling approach combined with quantitative experiments can provide enhanced understanding of cell phenomena involving receptor/ligand interactions. In stressing the need for a quantitative understanding of how receptor-mediated cell functions depend on receptor and ligand properties, the book offers comprehensive treatments of both basic and state-of-the-art model frameworks that span the entire spectrum of receptor processes—from fundamental cell surface binding, intracellular trafficking, and signal transduction events to the cell behavioral functions they govern, including proliferation, adhesion, and migration. The book emphasizes mechanistic models that are accessible to experimental testing and includes detailed examples of important contemporary issues. This much-needed book introduces chemical engineers and bioengineers to important problems in receptor biology and familiarizes cell biologists with the insights that can be gained from engineering analysis and synthesis. As such, chemical engineers, researchers, and advanced students in the fields of biotechnology, biomedical sciences, bioengineering, and molecular cell biology will find this book to be conceptually rich, timely, and useful.


A complete overview of the properties of deep-level, localized defects in semiconductors that can be created or destroyed by light examines the long lived (metastable) defects in terms of configurational coordinate diagrams, energy bands, and energy levels. DX and ELS centers in III-V compounds and crystalline materials are discussed, along with descriptions of hydrogenated amorphous silicon, and photoinduced defects in devices, xerography, solar cells, and thin film transistors. Annotation c. Book News, Inc., Portland, OR (booknews.com)