A detailed introduction of the Si and III-V compound semiconductors As you read through this text, youll gain a thorough understanding of the device physics of the Si and III-V compound semiconductors used in integrated circuits. The device physics of pn junctions, bipolar transistors, Schottky barriers, MOS capacitors, and MOS field-effect transistors (MOSFETs) are also developed. And the physical understanding of the material is emphasized throughout, with important equations being derived from basic physical concepts. Basic concepts from quantum and statistical mechanics are used to describe electrons and holes in semiconductors. Carrier transport and recombination processes are explained in detail and are applied to the description of the pn junction. And the physics of the semiconductor devices are related to the parameters used in Spice, which are illustrated using PSpice examples and problems. Unique features of the text:
Written for first-year graduate students studying the Si and III-V compound semiconductors used in integrated circuits, this text discusses the physics of semiconductor devices as they are related to SPICE parameters, circuit applications, inversion layer thickness, drain current flow in field-effect transistors after pinch off, and the subthreshold current in MOSFETs. Also includes figures and examples based on realistic device parameters. Annotation c. by Book News, Inc., Portland, Or.